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jmnic product specification silicon npn power transistors 2sc1079 2sc1080 description ? with to-3 package ? complement to type 2sa679/680 ? high power dissipation applications ? for audio power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2sc1079 120 v cbo collector-base voltage 2sc1080 open emitter 100 v 2sc1079 120 v ceo collector-emitter voltage 2sc1080 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i e emitter current -12 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon npn power transistors 2sc1079 2sc1080 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sc1079 120 v (br)ceo collector-emitter breakdown voltage 2sc1080 i c =0.1a ;i b =0 100 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =10a; i b =1a 3.0 v v be base-emitter on voltage i c =10a ; v ce =5v 2.5 v i cbo collector cut-off current v cb =50v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =2a ; v ce =5v 40 140 h fe-2 dc current gain i c =7a ; v ce =5v 15 f t transition frequency i c =2a ; v ce =5v 4 mhz ? h fe-1 classifications r y 40-80 70-140
jmnic product specification 3 silicon npn power transistors 2sc1079 2sc1080 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

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